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| BUK663R7-75C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET | |||
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NXP Semiconductors
200
ID
(A)
150
(1)
100
003aae419
50
0
0
50
100
150
200
Tmb (°C)
BUK663R7-75C
N-channel TrenchMOS FET
120
Pder
(%)
80
03aa16
40
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS/ ID
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae421
tp =10 μ s
100 μ s
10
1
10-1
10-1
DC
1 ms
10 ms
100 ms
1
10
102
103
V DS(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK663R7-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 15 September 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
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