BUK207-50Y Datasheet, PDF (8/13 Pages) NXP Semiconductors – TOPFET high side switch SMD version of BUK203-50Y

Philips Semiconductors
TOPFET high side switch
SMD version of BUK203-50Y
Product specification
BUK207-50Y
VIG / V
3.0
BUK207-50Y
2.5
VIG(ON)
2.0
VIG(OFF)
1.5
1.0
-60
-20
20
60
100
140
180
Tj / C
Fig.16. Typical input threshold voltages.
V_IG = f(T_j); conditions V_BG = 13 V, I_L = 100 mA
VIG / V
8.0
BUK207-50Y
7.5
7.0
6.5
-60
-20
20
60
100
140
180
Tj / C
Fig.17. Typical input clamping voltage.
V_IG = f(T_j); conditions I_I = 200 µA, V_BG = 13 V
IS / mA
20
BUK207-50Y
15
10
5
0
0
2
4
6
8
10
VSG / V
Fig.18. Typical status characteristic, T_j = 25 ˚C.
I_S = f(V_SG); conditions V_IG = V_BG = 0 V
IS
10 uA
BUK207-50Y
1 uA
100 nA
10 nA
-60
-20
20
60
100
140
180
Tj / C
Fig.19. Typical status leakage current.
I_S = f(T_j); conditions V_SG = 5 V, V_IG = V_BG = 0 V
IS / uA
500
BUK207-50Y
400
300
200
100
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VSG / V
Fig.20. Typical status low characteristic, T_j = 25 ˚C.
I_S = f(V_SG); conditions V_IG = 5 V, V_BG = 13 V, I_L = 0 A
VSG / V
1
BUK207-50Y
0.8
0.6
0.4
0.2
0
-60
-20
20
60
100
140
180
Tj / C
Fig.21. Typical status low voltage, V_SG = f(T_j).
conditions I_S = 50 µA, V_IG = 5 V, V_BG = 13 V, I_L = 0 A
July 1996
8
Rev 1.000