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| BUK207-50Y Datasheet, PDF (3/13 Pages) NXP Semiconductors – TOPFET high side switch SMD version of BUK203-50Y | |||
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Philips Semiconductors
TOPFET high side switch
SMD version of BUK203-50Y
Product specification
BUK207-50Y
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
Clamping voltages
VBG
Battery to ground
VBL
Battery to load
-VLG
Negative load to ground
IG = 1 mA
IL = IG = 1 mA
IL = 1 mA
Supply voltage
VBG
Operating range1
battery to ground
-
Currents
IL
Nominal load current2
IB
Quiescent current3
IG
Operating current4
IL
Off-state load current5
VBG = 13 V
VBL = 0.5 V; Tmb = 85 ËC
VIG = 0 V; VLG = 0 V
VIG = 5 V; IL = 0 A
VBL = 13 V; VIG = 0 V
Resistances
RON
On-state resistance6
VBG = 13 V; IL = 2 A; tp = 300 µs
RON
On-state resistance
VBG = 5 V; IL = 0.5 A; tp = 300 µs
RG
Internal ground resistance
IG = 10 mA
INPUT CHARACTERISTICS
Tmb = 25 ËC; VBG = 13 V
SYMBOL PARAMETER
CONDITIONS
II
VIG
VIG(ON)
VIG(OFF)
Input current
Input clamping voltage
Input turn-on threshold voltage
Input turn-off threshold voltage
VIG = 5 V
II = 200 µA
MIN. TYP. MAX. UNIT
50 55 65
V
50 55 65
V
12 17 21
V
5
-
40
V
1.6
-
-
A
-
0.1
2
µA
1.5 2.2 4 mA
-
0.1
1
µA
-
160 220 mâ¦
-
225 320 mâ¦
- 150 -
â¦
MIN.
35
6
-
1.5
TYP. MAX. UNIT
60 100 µA
7.5 8.5 V
2.1 2.7 V
2
-
V
1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2 Defined as in ISO 10483-1.
3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4 This is the continuous current drawn from the battery with no load connected, but with the input high.
5 The measured current is in the load pin only.
6 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
July 1996
3
Rev 1.000
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