BUJ100AT Datasheet, PDF (8/9 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
MECHANICAL DATA
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
Product specification
BUJ100AT
SOT223
D
B
E
A
X
c
y
H_E
b₁
4
vM A
A₁
1
2
3
e₁
b_p
e
wM B
Q
A
L_p
detail X
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A₁ bp b₁
c
D
E
e
e₁ H_E L_p
Q
v
w
y
mm
1.8 0.10 0.80 3.1 0.32 6.7
1.5 0.01 0.60 2.9 0.22 6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1 0.95
0.7 0.85
0.2
0.1
0.1
OUTLINE
VERSION
IEC
SOT223
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28
Fig.24. SOT223 surface mounting package.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to Discrete Semiconductor Packages, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
September 1999
8
Rev 1.000