BUJ100AT Datasheet, PDF (1/9 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ100AT
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for
use in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters and
inverters.
QUICK REFERENCE DATA
SYMBOL
V_CESM
V_CBO
V_CEO
I_C
I_CM
P_tot
V_CEsat
h_FE
t_fi
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time (Inductive)
CONDITIONS
V_BE = 0 V
T_sp ≤ 25 ˚C
I_C = 0.75 A;I_B = 150 mA
I_C = 0.75 A;V_CE = 5 V
I_C = 1.0 A,I_BON=200 mA
TYP.
-
-
-
-
-
-
0.23
14
50
MAX.
700
700
400
1.0
2.0
6
1.0
20
70
UNIT
V
V
V
A
A
W
V
ns
PINNING - SOT223
PIN
DESCRIPTION
1 base
2 collector
3 emitter
4 collector (tab)
PIN CONFIGURATION
4
1
2
3
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_CESM
V_CEO
V_CBO
I_C
I_CM
I_B
I_BM
P_tot
T_stg
T_j
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
V_BE = 0 V
T_sp ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
700
400
700
1.0
2.0
0.5
1.0
6
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
R_{th j-sp}
R_{th j-a}
PARAMETER
Junction to solder point
Junction to ambient
CONDITIONS
pcb mounted pad areas as in Fig.
23)
pcb mounted, minimum footprint
Mounted on 50x34x2mm
aluminium PCB
TYP.
-
70
30
MAX.
20
-
-
UNIT
K/W
K/W
K/W
September 1999
1
Rev 1.000