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BFG410W_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – NPN 22 GHz wideband transistor | |||
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NXP Semiconductors
NPN 22 GHz wideband transistor
Product specification
BFG410W
handbook, full pagewidth
90°
1
135°
0.5
0.2
0.2
0.5
1
180° 0
1.0
2
45°
0.8
0.6
0.4
5
0.2
2
5 40 MHz
0° 0
0.2
5
3 GHz
0.5
â135°
1
â90°
2
â45°
1.0
MGG727
IC = 10 mA; VCE = 2 V; Zo = 50 ïï®
Fig.12 Common emitter output reflection coefficient (S22); typical values.
Noise data
VCE = 2 V; typical values.
f
IC
(MHz) (mA)
Fmin
(dB)
900
1
0.8
2
0.9
4
1.1
6
1.3
8
1.5
10
1.7
12
1.9
14
2.1
2000 1
1.2
2
1.2
4
1.4
6
1.6
8
1.8
10
2.0
12
2.2
14
2.4
ïmag
0.73
0.58
0.40
0.28
0.20
0.14
0.06
0.05
0.64
0.50
0.34
0.25
0.17
0.12
0.05
0.03
ïangle
11.2
10.1
10.1
11.0
8.0
10.5
10.1
14.2
35.7
35.8
34.4
33.7
34.5
35.8
38.0
44.8
rn
(ï)
0.56
0.43
0.33
0.30
0.30
0.27
0.25
0.26
0.57
0.44
0.37
0.34
0.35
0.34
0.35
0.34
handbook, h3alfpage
Fmin
(dB)
2
(1)
(2)
1
MGG723
0
0
4
8
(1) f = 2 GHz; VCE = 2 V.
(2) f = 900 MHz; VCE = 2 V.
12
16
IC (mA)
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
1998 Mar 11
8
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