BFG410W_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN 22 GHz wideband transistor

NXP Semiconductors
NPN 22 GHz wideband transistor
Product specification
BFG410W
FEATURES
 Very high power gain
 Low noise figure
 High transition frequency
 Emitter is thermal lead
 Low feedback capacitance.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
APPLICATIONS
 RF front end
 Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
 Radar detectors
 Pagers
 Satellite television tuners (SATV)
 High frequency oscillators.
handbook, halfpage
3
4
2
Top view
1
MSB842
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
Marking code: P4.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_max
F
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum power gain
noise figure
CONDITIONS
MIN.
open emitter

open base


T_s  110 C

I_C = 10 mA; V_CE = 2 V; T_j = 25 C
50
I_C = 0; V_CB = 2 V; f = 1 MHz

I_C = 10 mA; V_CE = 2 V; f = 2 GHz; T_amb = 25 C 
I_C = 10 mA; V_CE = 2 V; f = 2 GHz; T_amb = 25 C 
I_C = 1 mA; V_CE = 2 V; f = 2 GHz; _S = _opt

TYP.


10

80
45
22
21
1.2
MAX. UNIT
10 V
4.5 V
12 mA
54 mW
120

fF

GHz

dB

dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1998 Mar 11
2