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BF1204 Datasheet, PDF (8/12 Pages) NXP Semiconductors – Dual N-channel dual gate MOS-FET
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Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1204
102
handbook, halfpage
Yis
(mS)
10
1
10−1
10
MLD429
bis
gis
102
103
f (MHz)
103
handbook, halfpage
yrs
(µS)
102
10
1
10
MLD430 −103
ϕrs
(deg)
ϕrs
−102
yrs
−10
−1
102
103
f (MHz)
VDS = 5 V; VG2 = 4 V.
Fig.15 Input admittance as a function of frequency;
typical values.
VDS = 5 V; VG2 = 4 V.
Fig.16 Reverse transfer admittance and phase as
a function of frequency; typical values.
102
handbook, halfpage
yfs
(mS)
10
yfs
ϕfs
MLD431 −102
ϕfs
(deg)
−10
10
handbook, halfpage
Yos
(mS)
1
10−1
MLD432
bos
gos
1
10
102
−1
103
10−2
10
102
103
f (MHz)
f (MHz)
VDS = 5 V; VG2 = 4 V.
Fig.17 Forward transfer admittance and phase as
a function of frequency; typical values.
VDS = 5 V; VG2 = 4 V.
Fig.18 Output admittance as a function of
frequency; typical values.
2001 Apr 25
8
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