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BF1204 Datasheet, PDF (4/12 Pages) NXP Semiconductors – Dual N-channel dual gate MOS-FET
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Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1204
STATIC CHARACTERISTICS
Tj = 25 °C; per MOS-FET; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
V(BR)G1-SS
V(BR)G2-SS
V(F)S-G1
V(F)S-G2
VG1-S(th)
VG2-S(th)
IDSX
IG1-S
IG2-S
drain-source breakdown voltage
gate-source breakdown voltage
gate-source breakdown voltage
forward source-gate voltage
forward source-gate voltage
gate-source threshold voltage
gate-source threshold voltage
drain-source current
gate cut-off current
gate cut-off current
VG1-S = VG2-S = 0; ID = 10 µA
VGS = VDS = 0; IG1-S = 10 mA
VGS = VDS = 0; IG2-S = 10 mA
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
VDS = 5 V; VG2-S = 4 V; ID = 100 µA
VDS = 5 V; VG1-S = 4 V; ID = 100 µA
VG2-S = 4 V; VDS = 5 V; RG = 120 kΩ; note 1
VG1-S = 5 V; VG2-S = VDS = 0
VG2-S = 4 V; VG1-S = VDS = 0
Note
1. RG1 connects gate 1 to VGG = 5 V.
MIN.
10
6
6
0.5
0.5
0.3
0.3
8
−
−
MAX.
−
10
10
1.5
1.5
1
1.2
16
50
20
UNIT
V
V
V
V
V
V
V
mA
nA
nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 12 mA; per MOS-FET (1); unless otherwise specified.
SYMBOL
PARAMETER
yfs
Cig1-ss
Cig2-ss
Coss
Crss
Gtr
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
power gain
NF
noise figure
Xmod
cross-modulation
CONDITIONS
MIN.
Tj = 25 °C
25
f = 1 MHz
−
f = 1 MHz
−
f = 1 MHz
−
f = 1 MHz
−
f = 200 MHz; GS = 2 mS; BS = BS(opt); 30
GL = 0.5 mS; BL = BL(opt); note 1
f = 400 MHz; GS = 2 mS; BS = BS(opt); 26
GL = 1 mS; BL = BL(opt); note 1
f = 800 MHz; GS = 3.3 mS; BS = BS(opt); 21
GL = 1 mS; BL = BL(opt); note 1
f = 10.7 MHz; GS = 20 mS; BS = 0
−
f = 400 MHz; YS = YS(opt)
−
f = 800 MHz; YS = YS(opt)
−
input level for k = 1% at 0 dB AGC;
90
fw = 50 MHz; funw = 60 MHz; note 2
input level for k = 1% at 10 dB AGC; −
fw = 50 MHz; funw = 60 MHz; note 2
input level for k = 1% at 40 dB AGC; 100
fw = 50 MHz; funw = 60 MHz; note 2
TYP.
30
1.7
3.3
0.85
15
34
30
25
9
0.9
1.1
−
92
105
MAX.
40
2.2
−
−
−
38
34
29
11
1.5
1.8
−
−
−
UNIT
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBµV
dBµV
dBµV
Notes
1. For the MOS-FET not in use: VG1-S = 0; VDS = 0.
2. Measured in Fig.19 test circuit.
2001 Apr 25
4
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