74HC_HCT1G66_15 Datasheet, PDF (8/18 Pages) NXP Semiconductors – Single-pole single-throw analog switch

NXP Semiconductors
74HC1G66; 74HCT1G66
Single-pole single-throw analog switch
Table 9. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); C_L = 50 pF; R_L = 1 kΩ, unless otherwise specified;
For test circuit see Figure 10.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min Typ^[1] Max Min
Max
t_dis
disable time
E to Y or Z; see Figure 9
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 5.0 V; C_L = 15 pF
V_CC = 6.0 V
V_CC = 9.0 V
C_PD
power dissipation V_I = GND to V_CC
capacitance
[2]
-
-
-
-
-
[3]
-
27
190
-
16
38
-
11
-
-
14
33
-
12
16
-
9
-
-
225 ns
45 ns
-
ns
38 ns
20 ns
-
pF
74HCT1G66
t_pd
propagation delay Y to Z or Z to Y; R_L = ∞ Ω;
[2]
see Figure 8
V_CC = 4.5 V
t_en
enable time
E to Y or Z; see Figure 9
V_CC = 4.5 V
V_CC = 5.0 V; C_L = 15 pF
t_dis
disable time
E to Y or Z; see Figure 9
V_CC = 4.5 V
V_CC = 5.0 V; C_L = 15 pF
C_PD
power dissipation V_I = GND to V_CC − 1.5 V
capacitance
-
[2]
3
15
-
-
15
30
-
-
12
-
-
[2]
-
13
44
-
-
12
-
-
[3]
-
9
-
-
18 ns
36 ns
-
ns
53 ns
-
ns
-
pF
[1] All typical values are measured at T_amb = 25 °C.
[2] t_pd is the same as t_PLH and t_PHL.
t_en is the same as t_PZL and t_PZH.
t_dis is the same as t_PLZ and t_PHZ.
[3] C_PD is used to determine the dynamic power dissipation P_D (µW).
P_D = C_PD × V_CC2 × f_i + Σ ((C_L × C_SW) × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
C_SW = maximum switch capacitance in pF (see Table 7);
V_CC = supply voltage in Volt;
Σ ((C_L × C_SW) × V_CC2 × f_o) = sum of outputs.
74HC_HCT1G66_4
Product data sheet
Rev. 04 — 19 December 2008
© NXP B.V. 2008. All rights reserved.
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