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| 74HC_HCT1G66_15 Datasheet, PDF (10/18 Pages) NXP Semiconductors – Single-pole single-throw analog switch | |||
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NXP Semiconductors
74HC1G66; 74HCT1G66
Single-pole single-throw analog switch
VI 90 %
tW
negative
pulse
VM
10 %
0V
tf
VI
positive
pulse
tr
90 %
VM
10 %
0V
tW
VM
tr
tf
VM
VI
G
VCC
VO
DUT
RT
VCC
RL S1
CL
open
001aad983
Test data is given in Table 11.
Deï¬nitions for test circuit:
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
CL = Load capacitance including jig and probe capacitance.
RL = Load resistance.
S1 = Test selection switch.
Fig 10. Test circuit for measuring switching times
Table 11. Test data
Type
Input
74HC1G66
74HCT1G66
VI
GND to VCC
GND to 3 V
tr, tf[1]
6 ns
6 ns
Load
CL
50 pF, 15 pF
50 pF, 15 pF
RL
1 kâ¦, â â¦
1 kâ¦, â â¦
[1] There is no constraint on tr, tf with a 50% duty factor when measuring fmax.
S1 position
tPHL, tPLH
open
open
tPZH, tPHZ
GND
GND
tPZL, tPLZ
VCC
VCC
11.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics for 74HC1G66 and 74HCT1G66
GND = 0 V; tr = tf = 6.0 ns; CL = 50 pF; unless otherwise speciï¬ed. All typical values are measured at Tamb = 25 °C.
Symbol Parameter
Conditions
Min Typ Max Unit
THD
total harmonic
distortion
fi = 1 kHz; RL = 10 kâ¦; see Figure 11
VCC = 4.5 V; VI = 4.0 V (p-p)
%
-
0.04 -
%
VCC = 9.0 V; VI = 8.0 V (p-p)
fi = 10 kHz; RL = 10 kâ¦; see Figure 11
-
0.02 -
%
VCC = 4.5 V; VI = 4.0 V (p-p)
-
0.12 -
%
VCC = 9.0 V; VI = 8.0 V (p-p)
-
0.06 -
%
74HC_HCT1G66_4
Product data sheet
Rev. 04 â 19 December 2008
© NXP B.V. 2008. All rights reserved.
10 of 18
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