74HC2G08 Datasheet, PDF (8/16 Pages) NXP Semiconductors – Dual 2-input AND gate

Philips Semiconductors
Dual 2-input AND gate
Product specification
74HC2G08; 74HCT2G08
Type 74HCT2G08
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
OTHER
V_CC (V)
MIN.
T_amb = −40 to +85 °C; note 1
V_IH
V_IL
V_OH
V_OL
I_LI
I_CC
∆I_CC
HIGH-level input voltage
LOW-level input voltage
HIGH-level output
voltage
LOW-level output voltage
input leakage current
quiescent supply current
additional supply current
per input
V_I = V_IH or V_IL
I_O = −20 µA
I_O = −4.0 mA
V_I = V_IH or V_IL
I_O = 20 µA
I_O = 4.0 mA
V_I = V_CC or GND
V_I = V_CC or GND;
I_O = 0
V_I = V_CC − 2.1 V; I_O = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
4.5 to 5.5
2.0
−
4.4
4.13
−
−
−
−
−
T_amb = −40 to +125 °C
V_IH
V_IL
V_OH
V_OL
I_LI
I_CC
∆I_CC
HIGH-level input voltage
4.5 to 5.5 2.0
LOW-level input voltage
4.5 to 5.5 −
HIGH-level output
voltage
V_I = V_IH or V_IL
I_O = −20 µA
4.5
4.4
I_O = −4.0 mA
4.5
3.7
LOW-level output voltage V_I = V_IH or V_IL
I_O = 20 µA
4.5
−
I_O = 4.0 mA
4.5
−
input leakage current
V_I = V_CC or GND
5.5
−
quiescent supply current V_I = V_CC or GND;
5.5
−
I_O = 0
additional supply current V_I = V_CC − 2.1 V; I_O = 0 4.5 to 5.5 −
per input
Note
1. All typical values are measured at T_amb = 25 °C.
TYP.
1.6
1.2
4.5
4.32
0
0.15
−
−
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
−
V
0.8
V
−
V
−
V
0.1
V
0.33 V
±1.0
µA
10
µA
375
µA
−
V
0.8
V
−
V
−
V
0.1
V
0.4
V
±1.0
µA
20
µA
410
µA
2003 Oct 22
8