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74HC2G08 Datasheet, PDF (5/16 Pages) NXP Semiconductors – Dual 2-input AND gate
Philips Semiconductors
Dual 2-input AND gate
Product specification
74HC2G08; 74HCT2G08
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC
VI
VO
Tamb
supply voltage
input voltage
output voltage
operating ambient
temperature
tr, tf
input rise and fall times
CONDITIONS
74HC2G08
74HCT2G08
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
2.0 5.0 6.0 4.5 5.0 5.5 V
0
−
VCC 0
−
VCC V
0
−
VCC 0
−
VCC V
see DC and AC −40 +25 +125 −40 +25 +125 °C
characteristics per
device
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
−
−
1000 −
−
−
ns
−
6.0 500 −
6.0 500 ns
−
−
400 −
−
−
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
VCC
IIK
IOK
IO
ICC, IGND
Tstg
PD
supply voltage
input diode current
output diode current
output source or sink current
VCC or GND current
storage temperature
power dissipation
CONDITIONS
VI < −0.5 V or VI > VCC + 0.5 V; note 1
VO < −0.5 V or VO > VCC + 0.5 V; note 1
−0.5 V < VO < VCC + 0.5 V; note 1
note 1
Tamb = −40 to +125 °C; note 2
MIN.
−0.5
−
−
−
−
−65
−
MAX. UNIT
+7.0 V
±20 mA
±20 mA
25
mA
50
mA
+150 °C
300 mW
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110 °C the value of PD derates linearly with 8 mW/K.
2003 Oct 22
5