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74HC2G02 Datasheet, PDF (8/16 Pages) NXP Semiconductors – Dual 2-input NOR gate
Philips Semiconductors
Dual 2-input NOR gate
Product specification
74HC2G02; 74HCT2G02
Type 74HCT2G02
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
Tamb = −40 to +85 °C; note 1
VIH
HIGH-level input
voltage
VIL
LOW-level input
voltage
VOH
HIGH-level output
voltage
VOL
LOW-level output
voltage
ILI
input leakage current
ICC
quiescent supply
current
∆ICC
additional supply
current per input
Tamb = −40 to +125 °C
VIH
HIGH-level input
voltage
VIL
LOW-level input
voltage
VOH
HIGH-level output
voltage
VOL
LOW-level output
voltage
ILI
ICC
∆ICC
input leakage current
quiescent supply
current
additional supply
current per input
TEST CONDITIONS
OTHER
VCC (V)
VI = VIH or VIL
IO = −20 µA
IO = −4.0 µA
VI = VIH or VIL
IO = 20 µA
IO = 4.0 µA
VI = VCC or GND
VI = VCC or GND;
IO = 0
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
4.5 to 5.5
VI = VIH or VIL
IO = −20 µA
IO = −4.0 µA
VI = VIH or VIL
IO = 20 µA
IO = 4.0 µA
VI = VCC or GND
VI = VCC or GND;
IO = 0
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
5.5
4.5 to 5.5
MIN. TYP.
2.0
1.6
−
1.2
4.4
4.5
4.13 4.32
−
0
−
0.15
−
−
−
−
−
−
2.0
−
−
−
4.4
−
3.7
−
−
−
−
−
−
−
−
−
−
−
Note
1. All typical values are measured at Tamb = 25 °C.
MAX. UNIT
−
V
0.8
V
−
V
−
V
0.1
V
0.33 V
±1.0 µA
10
µA
375
µA
−
V
0.8
V
−
V
−
V
0.1
V
0.4
V
±1.0 µA
20
µA
410
µA
2003 May 14
8