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TDA8581 Datasheet, PDF (7/20 Pages) NXP Semiconductors – Multi-purpose high-gain power amplifier | |||
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Philips Semiconductors
Multi-purpose high-gain power ampliï¬er
Preliminary speciï¬cation
TDA8581
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-c
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
VALUE
40
1.5
UNIT
K/W
K/W
CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; fi = 1 kHz; RL = â; measured in test circuit of Fig.8; unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supply
VP
Iq(tot)
Istb
VO
VP(mute)
Vo
operating supply voltage
8.0
total quiescent current
â
standby current
â
DC output voltage
VP = 14.4 V
â
low supply voltage mute
6.0
single-ended and bridge-tied VP = 14.4 V; âmuteâ condition â
load output voltage
VI
DC input voltage
VP = 14.4 V
â
STANDBY PIN (see Table 1)
V5(stb)
voltage at STANDBY pin for
0
âstandbyâ condition
Vhys(5)(stb) hysteresis voltage at
note 1
â
STANDBY pin for âstandbyâ
condition
V5(mute)
voltage at STANDBY pin for V13 < 1 V
2.0
âmuteâ condition
V5(on)
voltage at STANDBY pin for V13 < 1 V; VP > 9 V; note 2
8.0
âonâ condition
14.4 28
V
120
140
mA
1
50
µA
7.0
â
V
7.0
8.0
V
â
20
mV
4.8
â
V
â
0.8
V
0.2
â
V
â
5.5
V
â
18
V
MUTE PIN (see Table 1)
V13(mute)
voltage at MUTE pin for
âmuteâ condition
V13(on)
voltage at MUTE pin for
âonâ condition
V5 = 5 V
V5 = 5 V
0
â
3.5
â
1.0
V
5.5
V
Diagnostic; output buffer (open-collector); see Figs 4, 5, 6 and 7
VOL
ILI
CD
Tj(diag)
low level output voltage
leakage current
clip detector
junction temperature for high
temperature warning
Isink = 1 mA
VDIAG = 14.4 V
VDIAG < 0.8 V
VDIAG < 0.8 V
â
0.2
0.8
V
â
â
1
µA
tbf
2
tbf
%
â
145
â
°C
1998 May 27
7
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