TDA8581 Datasheet, PDF (3/20 Pages) NXP Semiconductors – Multi-purpose high-gain power amplifier

Philips Semiconductors
Multi-purpose high-gain power amplifier
Preliminary specification
TDA8581
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_P
I_q(tot)
I_stb
G_v
operating supply voltage
total quiescent current
standby supply current
voltage gain
V_P = 14.4 V
V_P = 14.4 V
single-ended
bridge-tied load
Bridge-tied load application
P_o
THD
V_offset(DC)
V_no
SVRR
output power
total harmonic distortion
DC output offset voltage
noise output voltage
supply voltage ripple rejection
THD = 0.5%; V_P = 14.4 V;
R_L = 4 Ω
THD = 0.5%; V_P = 24 V;
R_L = 8 Ω
f_i = 1 kHz; P_o = 1 W;
V_P = 14.4 V; R_L = 8 Ω
f_i = 1 kHz; P_o = 10 W;
V_P = 24 V; R_L = 8 Ω
V_P = 14.4 V; ‘mute’
condition; R_L = 4 Ω
V_P = 14.4 V; ‘on’ condition
R_s = 1 kΩ; V_P = 14.4 V
f_i = 1 kHz; V_ripple(p-p) = 2 V;
‘on’ or ‘mute’ condition;
R_s = 0 Ω
Single-ended application
P_o
V_offset(DC)
V_no
SVRR
output power
DC output offset voltage
noise output voltage
supply voltage ripple rejection
THD = 0.5%; V_P = 14.4 V;
R_L = 4 Ω
THD = 0.5%; V_P = 24 V;
R_L = 4 Ω
V_P = 14.4 V; ‘mute’
condition; R_L = 4 Ω
V_P = 14.4 V; ‘on’ condition
R_s = 1 kΩ; V_P = 14.4 V
f_i = 1 kHz; V_ripple(p-p) = 2 V;
‘on’ or ‘mute’ condition;
R_s = 0 Ω
MIN.
8.0
−
−
38
44
TYP.
−
120
1
40
46
MAX.
28
140
50
42
48
UNIT
V
mA
µA
dB
dB
−
16
−
W
−
28
−
W
−
0.05
−
%
−
0.05
−
%
−
10
20
mV
−
0
120
mV
−
200
320
µV
55
−
−
dB
−
4.2
−
W
−
13
−
W
−
10
20
mV
−
0
120
mV
−
160
280
µV
42
−
−
dB
1998 May 27
3