TDA8575 Datasheet, PDF (7/16 Pages) NXP Semiconductors – Ground noise isolation amplifier

Philips Semiconductors
Ground noise isolation amplifier
Preliminary specification
TDA8575
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CC
I_ORM
V_sc
T_stg
T_amb
T_j
supply voltage
repetitive peak output current
AC and DC short-circuit safe voltage
storage temperature
operating ambient temperature
junction temperature
operating
MIN.
−
−
−
−55
−40
−
MAX.
18
40
18
+150
+85
+150
UNIT
V
mA
V
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-a}
PARAMETER
thermal resistance from junction to ambient in free air
TDA8575 (DIP16)
TDA8575T (SO16)
VALUE
75
110
UNIT
K/W
K/W
QUALITY SPECIFICATION
Quality according to UZW-BO/FQ-0601, if this type is used as an audio amplifier.
DC CHARACTERISTICS
V_CC = 8.5 V; T_amb = 25 °C; R_L = 10 kΩ; in accordance with application circuit (see Fig.9).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
V_CC
supply voltage
I_CC
supply current
V_O
output voltage
V_i = 0 V
note 1
5
8.5
−
12.6
−
4.7
Note
1. The DC output voltage with respect to ground is approximately 0.5V_CC.
MAX.
18
15
−
UNIT
V
mA
V
1996 Jul 29
7