PZU3.6B2A Datasheet, PDF (7/14 Pages) NXP Semiconductors – Single Zener diodes

NXP Semiconductors
PZUxBA series
Single Zener diodes
Table 9. Characteristics per type; PZU6.2BA to PZU36BA and PZU6.2BA/DG to PZU36BA/DG …continued
T_j = 25 °C unless otherwise specified.
PZUxBA Sel
Working
voltage
V_Z (V)
Differential resistance Reverse
r_dif (Ω)
current
I_R (nA)
Temperature Diode
coefficient capacitance
S_Z (mV/K) C_d (pF)^[1]
Non-repetitive
peak reverse
current
I_ZSM (A)^[2]
I_Z = 5 mA I_Z = 0.5 mA I_Z = 5 mA
I_Z = 5 mA
Min Max Max
Max
Max V_R (V) Typ
Max
Max
14
B2 13.70 14.30 80
10
100 11
10.4
101
2
15
B
13.84 15.52 80
15
50
11
11.4
99
2
B1 13.84 14.46
B2 14.34 14.98
B3 14.85 15.52
16
B
15.37 17.09 80
20
50
12
12.4
97
1.5
B1 15.37 16.01
B2 15.85 16.51
B3 16.35 17.09
18
B
16.94 19.03 80
20
50
13
14.4
93
1.5
B1 16.94 17.7
B2 17.56 18.35
B3 18.21 19.03
20
B
18.86 21.08 100
20
50
15
16.4
88
1.5
B1 18.86 19.7
B2 19.52 20.39
B3 20.21 21.08
22
B
20.88 23.17 100
25
50
17
18.4
84
1.3
B1 20.88 21.77
B2 21.54 22.47
B3 22.23 23.17
24
B
22.93 25.57 120
30
50
19
20.4
80
1.3
B1 22.93 23.96
B2 23.72 24.78
B3 24.54 25.57
27
B
25.1 28.9 150
40
50
21
23.4
73
1
30
B
28 32 200
40
50
23
26.6
66
1
33
B
31 35 250
40
50
25
29.7
60
0.9
36
B
34 38 300
60
50
27
33.0
59
0.8
[1] f = 1 MHz; V_R = 0 V
[2] t_p = 100 µs; square wave; T_j = 25 °C prior to surge
PZUXBA_SER_1
Product data sheet
Rev. 01 — 19 September 2008
© NXP B.V. 2008. All rights reserved.
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