PZU3.6B2A Datasheet, PDF (5/14 Pages) NXP Semiconductors – Single Zener diodes

NXP Semiconductors
PZUxBA series
Single Zener diodes
Table 8. Characteristics per type; PZU2.4BA to PZU5.6B3A and PZU2.4BA/DG to PZU5.6B3A/DG
T_j = 25 °C unless otherwise specified.
PZUxBA Sel
Working
voltage
V_Z (V)
Differential resistance Reverse
r_dif (Ω)
current
I_R (µA)
Temperature Diode
coefficient capacitance
S_Z (mV/K) C_d (pF)^[1]
I_Z = 5 mA I_Z = 0.5 mA I_Z = 5 mA
I_Z = 5 mA
Min Max Max
Max
Max V_R (V) Typ
Max
2.4
B
2.3 2.6 1000
100
50
1
−1.6
450
Non-repetitive
peak reverse
current
I_ZSM (A)^[2]
Max
8
2.7
B
2.5 2.9 1000
100
20
1
−2.0
440
8
B1 2.5 2.75
B2 2.65 2.9
3.0
B
2.8 3.2 1000
95
10
1
−2.1
425
8
B1 2.8 3.05
B2 2.95 3.2
3.3
B
3.1 3.5 1000
95
5
1
−2.4
410
8
B1 3.1 3.35
B2 3.25 3.5
3.6
B
3.4 3.8 1000
90
5
1
−2.4
390
8
B1 3.4 3.65
B2 3.55 3.8
3.9
B
3.7 4.1 1000
90
3
1
−2.5
370
8
B1 3.7 3.97
B2 3.87 4.10
4.3
B
4.01 4.48 1000
90
3
1
−2.5
350
8
B1 4.01 4.21
B2 4.15 4.34
B3 4.28 4.48
4.7
B
4.42 4.9 800
80
2
1
−1.4
325
8
B1 4.42 4.61
B2 4.55 4.75
B3 4.69 4.9
5.1
B
4.84 5.37 250
60
2
1.5 0.3
300
5.5
B1 4.84 5.04
B2 4.98 5.2
B3 5.14 5.37
5.6
B
5.31 5.92 100
40
1
2.5 1.9
275
5.5
B1 5.31 5.55
B2 5.49 5.73
B3 5.67 5.92
[1] f = 1 MHz; V_R = 0 V
[2] t_p = 100 µs; square wave; T_j = 25 °C prior to surge
PZUXBA_SER_1
Product data sheet
Rev. 01 — 19 September 2008
© NXP B.V. 2008. All rights reserved.
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