PSMN8R7-80BS_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN8R7-80BS
N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK
25
R_DSon
(mΩ)
20
003aad457
15
10
5
4
8
12
16
20
V_GS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aae992
max
typ
min
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Gate-source threshold voltage as a function of
of gate-source voltage; typical values
junction temperature
10^−1
03aa35
3
I_D
a
(A)
10^−2
min typ max
2.4
003aae090
10^−3
1.8
10^−4
1.2
10^−5
0.6
10^−6
0
2
4
6
V_GS (V)
0
-60
0
60
120
180
T_j (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN8R7-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
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