PSMN8R7-80BS_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK

NXP Semiconductors
PSMN8R7-80BS
N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK
Table 6. Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 10 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 25 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 40 V
Min Typ Max Unit
-
0.79 1.2 V
-
42 -
ns
-
66 -
nC
100
I_D
(A)
80
20
8
5.5
6
60
40
20
0
0
1
2
003aad449
5
4.5
V_GS (V) = 4
3 _{VDS (V)} 4
100
I_D
(A)
80
60
40
20
0
0
003aad451
T_j = 175 °C
T_j = 25 °C
2
4
6
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
5000
C
(pF)
4000
003aad455
C_iss
100
g_fs
(S)
80
003aad456
3000
C_rss
60
2000
40
1000
20
0
0
3
6
9 _{VGS (V)} 12
0
0
20
40
60
80
100
I_D (A)
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Forward transconductance as a function of
function of gate-source voltage; typical values
drain current; typical values
PSMN8R7-80BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
© NXP B.V. 2012. All rights reserved.
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