PSMN3R9-25MLC_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology

NXP Semiconductors
PSMN3R9-25MLC
N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
120
g_fs
(S)
100
80
60
40
20
0
0
003aaj783
15
30
45
60
75
I_D (A)
75
I_D
(A)
60
45
30
15
0
0
003aaj784
T_j = 150 °C
1
2
T_j = 25 °C
3
4
V_GS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values
20
3
R_DSon
(mΩ)
15
003aaj787
10
3.5
Fig 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
003aaj788
2
a
10V
1.5
V_GS=4.5V
1
4.5
5
V_GS (V) = 10
0
0
15
30
45
60
75
I_D (A)
0.5
0
-60
0
60
120
180
T_j (°C)
Fig 10. Drain-source on-state resistance as a function Fig 11. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
PSMN3R9-25MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 15 June 2012
© NXP B.V. 2012. All rights reserved.
7 of 14