PSMN2R0-30YLE_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – -channel 30 V 2 mΩ logic level MOSFET in LFPAK

NXP Semiconductors
PSMN2R0-30YLE
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
100
I_D
10
4.5
(A)
80
V_GS(V) = 3.5
003aah014
8
R_DSon
(mΩ)
6
003aah015
60
4
3
40
2.8
20
2.6
2.4
0
0
0.5
1
1.5 _VDS(V) 2
2
0
0
4
8
12
16
V_GS (V)
Fig. 6. Output characteristics; drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
150
g_fs
(S)
120
003aah016
90
60
30
0
0
20
40
60
80
100
I_D (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
200
I_D
(A)
150
003aah017
100
50
T_j = 175 °C
T_j = 25 °C
0
0
1
2
3
4
5
V_GS (V)
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN2R0-30YLE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 October 2012
© NXP B.V. 2012. All rights reserved
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