PSMN075-100MSE_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications

NXP Semiconductors
20
I_D
(A)
16
10 V
8V
7V
12
PSMN075-100MSE
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed
specifically for PoE applications
6.5 V
003aak718
6V
200
R_DSon
160
003aak719
V_GS = 5.5 V
120
8
5V
80
4
4.5 V
40
44 VV
0
0
0.5
1
1.5
2
2.5
3
V_DS (V)
0
0
4
8
12
16
20
V_GS (V)
Fig. 6. Output characteristics; drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10
g_fs
(S)
8
003aak720
25
I_D
(A)
20
003aak721
6
15
4
10
2
0
0
2
4
6
8
10
12
I_D (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
5
175°C
T_j = 25°C
0
012345678
V_GS (V)
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN075-100MSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2013
© NXP B.V. 2013. All rights reserved
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