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| PSMN075-100MSE_15 Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications | |||
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NXP Semiconductors
PSMN075-100MSE
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed
specifically for PoE applications
Symbol
VGS
ID
Parameter
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
VGS = 10 V; Tj = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
pulsed; tp ⤠10 µs; Tmb = 25 °C; Fig. 4
Tmb = 25 °C; Fig. 2
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 18 A;
Vsup ⤠100 V; RGS = 50 Ω; unclamped;
Fig. 3
Min Max Unit
-20 20
V
-
18
A
-
13
A
-
74
A
-
65
W
-55 175 °C
-55 175 °C
-
260 °C
-
54
A
-
74
A
-
25
mJ
20
ID
(A)
16
12
003aak714
120
Pder
(%)
80
03aa16
8
40
4
0
0 25 50 75 100 125 150 175 200
Tj (°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN075-100MSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2013
© NXP B.V. 2013. All rights reserved
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