PSMN070-200B Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
Product specification
N-channel TrenchMOS^(TM) transistor PSMN070-200B; PSMN070-200P
15 ^{Gate-source voltage, VGS (V)}
14 ^{ID = 35 A}
13 _{Tj = 25 C}
12
11
10
9
8
7
6
VDD = 40 V
VDD = 160 V
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100
Gate charge, QG (nC)
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G)
Source-Drain Diode Current, IF (A)
40
VGS = 0 V
35
30
175 C
25
20
Tj = 25 C
15
10
5
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Source-Drain Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
Maximum Avalanche Current, IAS (A)
100
25 C
10
Tj prior to avalanche = 150 C
1
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Fig.15. Maximum permissible non-repetitive
avalanche current (I_AS) versus avalanche time (t_AV);
unclamped inductive load
August 1999
7
Rev 1.000