PSMN070-200B Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
Product specification
N-channel TrenchMOS^(TM) transistor PSMN070-200B; PSMN070-200P
Drain current, ID (A)
40
VDS > ID X RDS(ON)
35
30
25
20
175 C
15
10
5
0
0
1
2
3
4
Gate-source voltage, VGS (V)
Tj = 25 C
5
6
Fig.7. Typical transfer characteristics.
I_D = f(V_GS)
Transconductance, gfs (S)
50
VDS > ID X RDS(ON)
45
Tj = 25 C
40
35
30
175 C
25
20
15
10
5
0
0
5
10
15
20
25
30
35
40
Drain current, ID (A)
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D)
Normalised On-state Resistance
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Fig.9. Normalised drain-source on-state resistance.
R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j)
Threshold Voltage, VGS(TO) (V)
4.5
4
maximum
3.5
3
typical
2.5
2
minimum
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
1.0E-01 ^{Drain current, ID (A)}
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C
Capacitances, Ciss, Coss, Crss (pF)
10000
Ciss
1000
100
Coss
Crss
10
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
August 1999
6
Rev 1.000