PMZ350UPE_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET

NXP Semiconductors
-3
I_D
(A)
-8 V
-4.5 V
-2
-1
-3 V
-2.5 V
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V_GS = -2.2 V
-1.8 V
-1.4 V
PMZ350UPE
20 V, P-channel Trench MOSFET
-10 ^{- 3}
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I_D
(A)
-10 ^{- 4}
(1)
(2)
(3)
-10 ^{- 5}
0
0
-1
-2
-3
-4
V_DS (V)
T_j = 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
-10 ^{- 6}
-0.2
-0.4
-0.6
T_j = 25 °C; V_DS = -3 V
(1) minimum values
(2) typical values
(3) maximum values
-0.8
-1.0
V_GS (V)
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
1200
-1.4 V
-1.8 V
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-2.2 V
1200
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R_DSon
(mΩ)
R_DSon
(mΩ)
800
800
-2.5 V
-3 V
T_j = 150 °C
400
-4.5 V
400
-8 V
T_j = 25 °C
0
0
-1
T_j = 25 °C
-2
-3
I_D (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
0
0
-2
I_D = -0.2 A
-4
-6
V_GS (V)
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMZ350UPE
Product data sheet
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14 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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