PMZ350UPE_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 20 V, P-channel Trench MOSFET

PMZ350UPE
20 V, P-channel Trench MOSFET
14 May 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection > 1.8 kV HBM
• Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.48 mm
3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j = 25 °C
-
-
-20 V
V_GS
gate-source voltage
-8
-
8
V
I_D
drain current
V_GS = -4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
-
-
-1.4 A
Static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -0.3 A; T_j = 25 °C
resistance
-
330 450 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm².
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