PMWD22XN Datasheet, PDF (7/12 Pages) NXP Semiconductors – Dual N-channel uTrenchMOS extremely low level FET

Philips Semiconductors
PMWD22XN
Dual N-channel µTrenchMOS extremely low level FET
2
V_GS(th)
(V)
1.5
1
0.5
03al82
max
typ
min
10^-3
I_D
(A)
10^-4
03al83
min
typ
max
10^-5
0
-60
0
60
120
180
T_j (°C)
I_D = 1 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
10^-6
0
0.5
1
1.5
2
V_GS (V)
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aaa791
5
V_GS
(V)
4
3
2
1
0
0
2
4
6
8 _{QG (nC)10}
I_D = 4 A; V_DS = 10 V
Fig 11. Gate-source voltage as a function of gate charge; typical values
9397 750 15093
Product data sheet
Rev. 01 — 15 August 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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