PMWD22XN Datasheet, PDF (1/12 Pages) NXP Semiconductors – Dual N-channel uTrenchMOS extremely low level FET

PMWD22XN
Dual N-channel µTrenchMOS extremely low level FET
Rev. 01 — 15 August 2005
Product data sheet
1. Product profile
1.1 General description
Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology.
1.2 Features
s Low threshold voltage
s Fast switching
s Common drain
1.3 Applications
s Portable appliances
s Battery management
1.4 Quick reference data
s V_DS ≤ 20 V
s R_DSon ≤ 26 mΩ
s I_D ≤ 9.2 A
s Q_GD = 2.7 nC (typ)
2. Pinning information
Table 1: Pinning
Pin
Description
1, 8
drain (D)
2, 3
source1 (S1)
4
gate1 (G1)
5
gate2 (G2)
6, 7
source2 (S2)
Simplified outline
8
5
Symbol
D
D
1
4
SOT530-1 (TSSOP8)
G1 S1 G2
S2
mbl600