PMPB20XPE_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – 20 V, single N-channel Trench MOSFET

NXP Semiconductors
PMPB20XPE
20 V, single P-channel Trench MOSFET
80
R_DSon
(mΩ)
-1.4 V
-1.5 V
-1.6 V
60
-1.7 V
017aaa878
-1.8 V
80
R_DSon
(mΩ)
60
017aaa879
-1.9 V
40
40
-2.5 V
20
20
V_GS = -4.5 V
T_j = 150 °C
T_j = 25 °C
0
0 -4 -8
T_j = 25 °C
-12 -16 -20 -24 -28
I_D (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
-28
I_D
(A)
-24
017aaa880
-20
0
0
-1
-2
-3
-4
-5
V_GS (V)
I_D = -7.1 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
1.6
a
017aaa881
1.4
-16
1.2
-12
1.0
-8
0.8
-4
T_j = 150 °C
T_j = 25 °C
0
0
-0.5
-1.0
V_DS > I_D × R_DSon
-1.5
-2.0
V_GS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.6
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
PMPB20XPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 November 2012
© NXP B.V. 2012. All rights reserved
7 / 14