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PMPB20XPE_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – 20 V, single N-channel Trench MOSFET
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NXP Semiconductors
PMPB20XPE
20 V, single P-channel Trench MOSFET
Symbol
RDSon
Parameter
drain-source on-state
resistance
gfs
forward
transconductance
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
Conditions
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -7.2 A; Tj = 25 °C
VGS = -4.5 V; ID = -7.2 A; Tj = 150 °C
VGS = -2.5 V; ID = -6.4 A; Tj = 25 °C
VGS = -1.8 V; ID = -3.7 A; Tj = 25 °C
VDS = -10 V; ID = -7.2 A; Tj = 25 °C
f = 1 MHz
VDS = -10 V; ID = -7.2 A; VGS = -4.5 V;
Tj = 25 °C
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = -10 V; ID = -7.2 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
IS = -1.9 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-
-
10
µA
-
19
23.5 mΩ
-
27
33
mΩ
-
22
29
mΩ
-
28
39
mΩ
-
50
-
S
-
5.2 -
Ω
-
30
45
nC
-
4.1 -
nC
-
7.1 -
nC
-
2945 -
pF
-
245 -
pF
-
210 -
pF
-
13
-
ns
-
60
-
ns
-
92
-
ns
-
50
-
ns
-
-0.7 -1.2 V
-28
ID
(A)
-24
-4.5 V
-20
-16
-12
-2.5 V
-1.9 V
-1.8 V
017aaa876
-1.7 V
-1.6 V
-1.5 V
-10-2
ID
(A)
-10-3
-10-4
017aaa877
min
typ
max
-8
VGS = -1.4 V
-4
-10-5
0
0
-1
-2
-3
-4
VDS (V)
Tj = 25 °C
-10-6
0
-0.4
Tj = 25 °C; VDS = -5 V
-0.8
-1.2
VGS (V)
Fig. 6.
PMPB20XPE
Output characteristics: drain current as a
Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
30 November 2012
6 / 14
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