PMEG6020ELR_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – 60 V, 2 A low leakage current Schottky barrier rectifier

NXP Semiconductors
PMEG6020ELR
60 V, 2 A low leakage current Schottky barrier rectifier
10
I_F
(1)
(A)
1
(2)
(3)
10^-1
aaa-009639
10^-2
10^-3
(4) (5) (6)
10^-4
0
0.2
0.4
0.6
0.8
1.0
V_F (V)
(1) T_j = 175 °C
(2) T_j = 150 °C
(3) T_j = 125 °C
(4) T_j = 85 °C
(5) T_j = 25 °C
(6) T_j = −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
175
C_d
(pF)
150
aaa-009641
125
100
75
50
25
0
0
20
40
60
V_R (V)
f = 1 MHz; T_amb = 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
10^-2
I_R
(A) _{10-3 (1)}
10^-4
(2)
(3)
10^-5
(4)
10^-6
aaa-009640
10^-7
(5)
10^-8
10^-9
(6)
10^-10
0
20
(1) T_j = 175 °C
(2) T_j = 150 °C
(3) T_j = 125 °C
(4) T_j = 85 °C
(5) T_j = 25 °C
(6) T_j = −40 °C
40
60
V_R (V)
Fig. 5. Reverse current as a function of reverse
voltage; typical values
1.6
aaa-009648
P_F(AV)
(W)
1.2
(4)
(3)
(2)
0.8
(1)
0.4
0
0
1
T_j = 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
2
3
I_F(AV) (A)
Fig. 7.
Average forward power dissipation as a
function of average forward current; typical
values
PMEG6020ELR
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 15