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| PMEG6020ELR_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – 60 V, 2 A low leakage current Schottky barrier rectifier | |||
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NXP Semiconductors
PMEG6020ELR
60 V, 2 A low leakage current Schottky barrier rectifier
10. Characteristics
Table 7.
Symbol
VF
IR
Cd
trr
V(BR)R
VFRM
Characteristics
Parameter
Conditions
forward voltage
IF = 0.1 A; Tj = 25 °C
IF = 0.5 A; Tj = 25 °C
IF = 0.7 A; Tj = 25 °C
IF = 1 A; Tj = 25 °C
IF = 1.6 A; Tj = 25 °C
IF = 2 A; Tj = 25 °C
reverse current
VR = 5 V; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
VR = 10 V; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
VR = 40 V; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
VR = 60 V; tp ⤠300 µs; δ ⤠0.02;
Tj = 25 °C; pulsed
VR = 10 V; tp ⤠300 µs; δ ⤠0.02;
Tj = 125 °C; pulsed
VR = 60 V; tp ⤠300 µs; δ ⤠0.02;
Tj = 125 °C; pulsed
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 4 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
reverse breakdown
voltage
IR = 1 mA; Tj = 25 °C
peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
voltage
Min Typ Max Unit
-
475 540 mV
-
550 605 mV
-
575 625 mV
-
605 660 mV
-
660 720 mV
-
690 760 mV
-
5
-
nA
-
6
-
nA
-
25
50
nA
-
90
300 nA
-
25
-
µA
-
120 -
µA
-
110 -
pF
-
65
-
pF
-
45
-
pF
-
4.5 -
ns
60
-
-
V
-
580 -
mV
PMEG6020ELR
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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