PMEG3010BEP_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – 1 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG3010BEP
1 A low V_F MEGA Schottky barrier rectifier
0.5
P_F(AV)
(W)
0.4
0.3
0.2
0.1
(2)
(1)
006aab462
(4)
(3)
0.25
P_R(AV)
(W)
0.20
0.15
0.10
0.05
006aab442
(1)
(2)
(3)
(4)
0.0
0.0
0.5
1.0
1.5
I_F(AV) (A)
T_j = 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig 7.
Average forward power dissipation as a
function of average forward current; typical
values
1.5
(1)
I_F(AV)
(A)
(2)
1.0
006aab463
0.00
0
10
20
30
V_R (V)
T_j = 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 8. Average reverse power dissipation as a
function of reverse voltage; typical values
1.5
(1)
I_F(AV)
(A)
(2)
1.0
006aab464
(3)
0.5
(4)
(3)
0.5
(4)
0.0
0
25 50 75 100 125 150 175
T_amb (°C)
FR4 PCB, standard footprint
T_j = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
0.0
0
25 50 75 100 125 150 175
T_amb (°C)
FR4 PCB, mounting pad for cathode 1 cm²
T_j = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 10. Average forward current as a function of
ambient temperature; typical values
PMEG3010BEP_1
Product data sheet
Rev. 01 — 20 April 2009
© NXP B.V. 2009. All rights reserved.
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