PMEG3010BEP_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – 1 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG3010BEP
1 A low V_F MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline
[1]
1
2
Graphic symbol
1
2
sym001
Table 3. Ordering information
Type number
Package
Name
Description
PMEG3010BEP -
plastic surface-mounted package; 2 leads
Version
SOD128
4. Marking
Table 4. Marking codes
Type number
PMEG3010BEP
Marking code
A2
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
V_R
reverse voltage
T_j = 25 °C
-
I_F(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
I_FSM
P_tot
non-repetitive peak
forward current
total power dissipation
T_amb ≤ 120 °C
T_sp ≤ 140 °C
square wave;
t_p = 8 ms
T_amb ≤ 25 °C
[1] _-
-
[2] _-
[3][4] _-
[3][5] _-
[3][1] _-
Max Unit
30
V
1
A
1
A
50
A
625
mW
1050 mW
2100 mW
PMEG3010BEP_1
Product data sheet
Rev. 01 — 20 April 2009
© NXP B.V. 2009. All rights reserved.
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