PMEG1201AESF_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – 12 V, 0.1 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG1201AESF
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
1
I_F
(A)
10^-1
(1)
(2)
(3)
10^-2
(4)
(5)
aaa-013228
10^-3
10^-4
0
0.2
pulsed condition
(1) T_j = 125 °C
(2) T_j = 85 °C
(3) T_j = 75 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
0.4
0.6
V_F (V)
Fig. 4. Forward current as a function of forward
voltage; typical values
50
C_d
(pF)
40
aaa-013230
30
20
10
0
0
4
8
12
V_R (V)
f = 1 MHz; T_amb = 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
10^-1
I_R
(1)
(A)
10^-2
(2)
(3)
10^-3
aaa-013229
10^-4
(4)
10^-5
10^-6
(5)
10^-7
0
4
pulsed condition
(1) T_j = 125 °C
(2) T_j = 85 °C
(3) T_j = 75 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
8
12
V_R (V)
Fig. 5. Reverse current as a function of reverse
voltage; typical values
20
P_F(AV)
(mW)
16
12
(2)
(1)
aaa-013231
(4)
(3)
8
4
0
0
50
T_j = 125 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
100
150
I_F(AV) (mA)
Fig. 7.
Average forward power dissipation as a
function of average forward current; typical
values
PMEG1201AESF
Product data sheet
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13 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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