PMEG1201AESF_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 12 V, 0.1 A low VF MEGA Schottky barrier rectifier

PMEG1201AESF
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
13 February 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra
small Chip-Scale Package (CSP).
2. Features and benefits
• Average forward current I_F(AV) ≤ 0.1 A
• Reverse voltage V_R ≤ 12 V
• Low forward voltage typ. V_F = 160 mV
• Low reverse current typ. I_R = 240 µA
• Package height typ. 0.3 mm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Ultra high speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
I_F(AV)
Quick reference data
Parameter
average forward
current
V_R
reverse voltage
V_F
forward voltage
I_R
reverse current
Conditions
δ = 0.5; f = 20 kHz; T_amb ≤ 115 °C;
square wave
δ = 0.5; f = 20 kHz; T_sp ≤ 125 °C;
square wave
T_j = 25 °C
I_F = 30 mA; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C
V_R = 5 V; T_j = 25 °C; pulsed
Min Typ Max Unit
[1]
-
-
0.1 A
-
-
0.1 A
-
-
12
V
-
160 200 mV
-
240 1000 µA
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
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