PIP3102-R Datasheet, PDF (7/13 Pages) NXP Semiconductors – LOGIC LEVEL TOPFET

Philips Semiconductors
Logic level TOPFET
Product Specification
PIP3102-R
a
2
Normalised R _DS(ON) = f(T_j)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
0
50
100
150
T_j / ^OC
Fig.8. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_DS(ON)25˚C = f(T_j); I_D = 10 A; V_IS = 4.4 V
R_DS(ON) / mOhm
50
40
30
max.
typ.
20
10
0
0
1
2
3
4
5
6
7
8
V_IS / V
Fig.9. Typical on-state resistance, T_j = 25˚C. R_DS(ON)
= f(V_IS); conditions: I_D = 10 A; V_PS = 4 V; t_p = 300 µs
I_D / A
y
80
70
V_DS = 13V
60
50
40
30
20
10
0
0
1
2
3
4
5
6
7
8
V_IS / V
Fig.10. Typical transfer characteristics, T_j = 25˚C.
I_D = f(V_IS); conditions: V_PS ≥ 4 V t_p = 300 µs
T_{j (TO)} ^OC
200
190
180
Data below 4V is for
information only. All
spec. values are for
normal operation at
4V and above.
170
160
150
3
Fig.11.
4
5
6
7
8
V_PS / V
Typical overtemperature protection threshold.
T_j(TO) = f(V_PS); conditions: V_IS = 5 V
I_DSS / A
100E-6
10E-6
max.
1E-6
typ.
100E-9
10E-9
1E-9
-50
0
50
100
150
T_j / ^OC
Fig.12. Typical drain source leakage current.
I_DSS = f(T_j); conditions: V_DS = 40 V; V_PS = V_IS = 0 V
I_IS / mA
3.5
3.0
2.5
2.0
1.5
Latched
1.0
Unlatched
0.5
0
0
1
2
3
4
5
6
7
V_IS / V
Fig.13. Typical DC input characteristics, T_j = 25˚C.
I_IS & I_ISL = f(V_IS); normal operation & protection latched
October 2002
7
Rev 1.000