PHP2N60E Datasheet, PDF (7/10 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Product specification
PHP2N60E, PHB2N60E, PHD2N60E
10,3
max
1,3
3,7
2,8
4,5
max
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max ^{1 2 3}
(2x)
0,9 max (3x)
0,6
2,54 2,54
2,4
Fig.19. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
August 1998
7
Rev 1.100