PHP2N60E Datasheet, PDF (2/10 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHP2N60E, PHB2N60E, PHD2N60E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
E_AS
E_AR
I_AS, I_AR
Non-repetitive avalanche
energy
Unclamped inductive load, I_AS = 1 A;
t_p = 0.32 ms; T_j prior to avalanche = 25˚C;
V_DD ≤ 50 V; R_GS = 50 Ω; V_GS = 10 V; refer
to fig:17
Repetitive avalanche energy² I_AR = 1.9 A; t_p = 1 µs; T_j prior to
avalanche = 25˚C; R_GS = 50 Ω; V_GS = 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
144
4
1.9
UNIT
mJ
mJ
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint
MIN. TYP. MAX. UNIT
-
- 2.5 K/W
- 60 - K/W
- 50 - K/W
2 pulse width and repetition rate limited by T_j max.
August 1998
2
Rev 1.100