PDTC144ET-215 Datasheet, PDF (7/17 Pages) NXP Semiconductors – NPN resistor-equipped transistors

NXP Semiconductors
PDTC144E series
NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k
7. Characteristics
Table 8. Characteristics
T_amb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
I_CBO
collector-base cut-off V_CB = 50 V; I_E = 0 A
current
-
-
100 nA
I_CEO
I_EBO
collector-emitter
cut-off current
emitter-base cut-off
current
V_CE = 30 V; I_B = 0 A
V_CE = 30 V; I_B = 0 A;
T_j = 150 C
V_EB = 5 V; I_C = 0 A
-
-
1
A
-
-
5
A
-
-
90
A
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = 5 V; I_C = 5 mA
I_C = 10 mA; I_B = 0.5 mA
80
-
-
-
-
150 mV
V_I(off)
V_I(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
V_CE = 5 V; I_C = 100 A
V_CE = 0.3 V; I_C = 2 mA
-
1.2 0.8 V
3
1.6 -
V
33
47
61
k
R2/R1 bias resistor ratio
0.8 1
1.2
C_c
collector capacitance V_CB = 10 V; I_E = i_e = 0 A;
-
-
2.5 pF
f = 1 MHz
f_T
transition frequency V_CE = 5 V; I_C = 10 mA; ^[1] -
230 -
MHz
f = 100 MHz
[1] Characteristics of built-in transistor
PDTC144E_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 15 November 2011
© NXP B.V. 2011. All rights reserved.
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