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PDTC144ET-215 Datasheet, PDF (3/17 Pages) NXP Semiconductors – NPN resistor-equipped transistors | |||
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NXP Semiconductors
PDTC144E series
NPN resistor-equipped transistors; R1 = 47 kï, R2 = 47 kï
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
open emitter
-
open base
-
open collector
-
-
negative
-
IO
output current
-
ICM
peak collector current
single pulse;
-
tp ï£ 1 ms
Ptot
total power dissipation
Tamb ï£ 25 ï°C
PDTC144EE (SOT416)
[1][2] -
PDTC144EM (SOT883)
[2][3] -
PDTC144ET (SOT23)
[1] -
PDTC144EU (SOT323)
[1] -
Tj
junction temperature
-
Tamb
ambient temperature
ï65
Tstg
storage temperature
ï65
Max Unit
50
V
50
V
10
V
+40 V
ï10
V
100
mA
100
mA
150
mW
250
mW
250
mW
200
mW
150
ï°C
+150 ï°C
+150 ï°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 ïm copper strip line, standard footprint.
PDTC144E_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9 â 15 November 2011
© NXP B.V. 2011. All rights reserved.
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