 English |
|
|
|
|
|
|
|
| PBSS4041SPN_15 Datasheet, PDF (7/20 Pages) NXP Semiconductors – 60 V NPN/PNP low VCEsat (BISS) transistor | |||
| |||
| ◁ |
NXP Semiconductors
PBSS4041SPN
60 V NPN/PNP low VCEsat (BISS) transistor
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
TR1; NPN low VCEsat transistor
ICBO
collector-base
cut-off current
VCB = 60 V; IE = 0 A
VCB = 60 V; IE = 0 A;
Tj = 150 °C
ICES
collector-emitter
cut-off current
VCE = 48 V; VBE = 0 V
IEBO
emitter-base
cut-off current
VEB = 5 V; IC = 0 A
hFE
VCEsat
RCEsat
DC current gain
VCE = 2 V
IC = 500 mA
IC = 1 A
IC = 2 A
IC = 4 A
IC = 6 A
collector-emitter
saturation voltage
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 10 mA
IC = 2 A; IB = 40 mA
IC = 4 A; IB = 200 mA
IC = 4 A; IB = 40 mA
IC = 7 A; IB = 350 mA
collector-emitter
IC = 4 A; IB = 200 mA
saturation resistance
VBEsat base-emitter
saturation voltage
VBEon
base-emitter
turn-on voltage
IC = 1 A; IB = 100 mA
IC = 4 A; IB = 400 mA
VCE = 2 V; IC = 2 A
td
delay time
tr
rise time
VCC = 12.5 V; IC = 1 A;
IBon = 0.05 A; IBoff = â0.05 A
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
fT
transition frequency VCE = 10 V; IC = 100 mA;
f = 100 MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Min
-
-
-
-
[1]
300
300
250
150
75
[1]
-
-
-
-
-
-
[1] -
[1]
-
-
[1] -
-
-
-
-
-
-
-
-
Typ Max Unit
-
100 nA
-
50
μA
-
100 nA
-
100 nA
500 -
500 -
450 -
250 -
150 -
40
60
mV
65
100 mV
85
145 mV
125 190 mV
220 320 mV
230 350 mV
32
48
mΩ
0.86 1
V
1.05 1.2 V
0.75 0.85 V
35
-
65
-
100 -
1050 -
220 -
1270 -
130 -
ns
ns
ns
ns
ns
ns
MHz
35
-
pF
PBSS4041SPN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 20 October 2010
© NXP B.V. 2010. All rights reserved.
7 of 20
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese