PBSS4041SPN_15 Datasheet, PDF (1/20 Pages) NXP Semiconductors – 60 V NPN/PNP low VCEsat (BISS) transistor

PBSS4041SPN
60 V NPN/PNP low V_CEsat (BISS) transistor
Rev. 2 — 20 October 2010
Product data sheet
1. Product profile
1.1 General description
NPN/PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PBSS4041SPN SOT96-1
Name
SO8
NPN/NPN
complement
PBSS4041SN
PNP/PNP
complement
PBSS4041SP
1.2 Features and benefits
„ Very low collector-emitter saturation voltage V_CEsat
„ High collector current capability I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ Loadswitch
„ Battery-driven devices
„ Power management
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
TR1; NPN low V_CEsat transistor
V_CEO
collector-emitter voltage
I_C
collector current
I_CM
peak collector current
R_CEsat
collector-emitter
saturation resistance
open base
single pulse; t_p ≤ 1 ms
I_C = 4 A; I_B = 0.2 A
Min Typ Max Unit
-
-
60 V
-
-
6.7 A
-
-
15 A
[1] _-
32 48 mΩ