PBSS302NZ Datasheet, PDF (7/14 Pages) NXP Semiconductors – 20 V, 5.8 A NPN low VCEsat (BISS) transistor

Philips Semiconductors
PBSS302NZ
20 V, 5.8 A NPN low V_CEsat (BISS) transistor
1000
h_FE
(1)
800
600 ⁽²⁾
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400
(3)
200
0
10^−1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
1.2
V_BE
(V)
0.8
(1)
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(2)
0.4
(3)
14
I_C
(A)
12
10
8
6
4
2
0
0
1
2
T_amb = 25 °C
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IB (mA) = 50
45
40
35
30
25
20
15
10
5
3
4
5
V_CE (V)
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
1.2
V_BEsat
(V)
0.8
(1)
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(2)
0.4 ₍₃₎
0
10^−1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
0
10^−1
1
10
10²
10³
10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 8. Base-emitter saturation voltage as a function of
collector current; typical values
PBSS302NZ_1
Product data sheet
Rev. 01 — 8 September 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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