PBSS302NZ Datasheet, PDF (1/14 Pages) NXP Semiconductors – 20 V, 5.8 A NPN low VCEsat (BISS) transistor

PBSS302NZ
20 V, 5.8 A NPN low V_CEsat (BISS) transistor
Rev. 01 — 8 September 2006
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PZ.
1.2 Features
I Low collector-emitter saturation voltage V_CEsat
I High collector current capability I_C and I_CM
I High collector current gain (h_FE) at high I_C
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I DC-to-DC conversion
I MOSFET gate driving
I Motor control
I Charging circuits
I Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_CEO
I_C
I_CM
collector-emitter voltage
collector current
peak collector current
R_CEsat collector-emitter
saturation resistance
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
t_p ≤ 1 ms
I_C = 4 A;
I_B = 200 mA
Min Typ Max
-
-
20
-
-
5.8
-
-
11.6
[1] _-
30
43
Unit
V
A
A
mΩ