NX3020NAKV_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – 30 V, 200 mA dual N-channel Trench MOSFET

NXP Semiconductors
NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
0.5
I_D
(A)
0.4
0.3
0.2
10 V
4.5 V
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3.5 V
3V
2.5 V
10^-3
I_D
(A)
10^-4
10^-5
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min
typ max
0.1
V_GS = 2 V
0
0
1
2
3
4
V_DS (V)
T_j = 25 °C
10^-6
0
0.5
1.0
T_j = 25 °C; V_DS = 5 V
1.5
2.0
V_GS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
10
R_DSon
2V
(Ω)
8
2.5 V
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3V
12
R_DSon
(Ω)
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8
6
3.5 V
T_j = 150 °C
4
4.5 V
4
V_GS = 10 V
2
T_j = 25 °C
0
0
0.1
0.2
0.3
0.4
0.5
I_D (A)
T_j = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
0
0
2
4
6
8
10
V_GS (V)
I_D = 0.15 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NX3020NAKV
Product data sheet
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29 October 2013
© NXP N.V. 2013. All rights reserved
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