NX3020NAKV_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 30 V, 200 mA dual N-channel Trench MOSFET

NX3020NAKV
30 V, 200 mA dual N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Very fast switching
• Trench MOSFET technology
• ESD protection
• Low threshold voltage
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
V_DS
drain-source voltage T_j = 25 °C
-
-
30
V
V_GS
gate-source voltage
-20 -
20
V
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C
[1]
-
-
200 mA
Static characteristics (per transistor)
R_DSon
drain-source on-state V_GS = 10 V; I_D = 100 mA; T_j = 25 °C
resistance
-
2.7 4.5 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm².
Scan or click this QR code to view the latest information for this product